The chemical part of the clean room consist of 4 fume and 1 laminar flow hood, equipped with hot plates, ultrasonic cleaner, pure nitrogen gas for drying samples and finally deionized water to 18MΏ/cm².
Acid fume hood
© CNRS Photothèque / Cyril Frésillon
2 Solvent fume : one for cleaning wafer and the other for lift-off
The main solvent used are:
- Aceton
- Isopropanol
- Trichloroetylen
- Dichloromethan
2 Acid fume : For wet etching of metal and semi-conductors
The main Acid available are :
© CNRS Photothèque / Cyril Frésillon
| Acetic Acid | |
| Hydrobromic Acid | |
| Hydrochloric Acid | |
| Citric Acid | |
| Hydrofluoric Acid | |
| Nitric Acid | |
| Orthophosphoric Acid | |
| Sulfuric Acid | |
| Potassium Dichromate | |
| Ammonium Fluoride | |
| Buffered Oxid Etch 7-1 | |
| Aluminium Etch solution | |
| Chrome Etch solution | |
| Gold Etch solution |
1 Laminar flow hood for Basis : for the etching of semiconductor or cleaning
The main basis available are:
| Ammonium hydroxide | |
| Sodium hydroxide | |
| Potassium hydroxide |
Examples of acid etching of III-V materials performed in the cleanroom:
