We have several solutions to deposit thin laers of insulating or conducting materials. The layers could be thin (few nm) to several microns.
Electron beam Evaporation - Plassys MEB 550S
This evaporator works with a 10KeV electron gun, which allow us to deposit several material like : Ag, Al, Au, Co, Ge, Pd, Pd/Ni, Pt, Ni and Ti.
We can add materials on demand.
We also can do in-situ oxidation (static or dynamic way on 2 to 3nm) or sample milling with an Ion gun (Argon).
Finnaly, we have the possibility to heat the substrate holder up to 300°C or to cool dowb him with liquid Nitrogen and use a tilt for the deposition (-90°/+90°)
Area of deposition : max 4 inches (10cm)
- PECVD Deposition [1] - Corial D250
This Plasma Enhanced Chemical Vapor Deposition (PECVD) system allow us to deposit only Oxide and Nitride silicon (SiO2 or Si3N4).
We can deposit layer(s) from 10 to 4000µm in a single run, with a deposition rate up to 100nm/min.
The reactor is coumposed with a 300W RF generator at 13.56MHz and some gas line like SiH4, NH3 and N2O (SF6 for cleaning processes).
The temperature of deposition available are 150°C or 280°C for a maximum sample size of 8 inches (20cm).
Gold Electroplating
Our system could deposit a maximum of 10µm of gold.
Sample size : max 2 pouces
[1] (Plasma Enhanced Chemical Vapor Deposition)